BFP 720 H6327

BFP720 SiGe:C NPN RF bipolar transistor Product description The BFP720 is a wideband NPN RF heterojunction bipolar transistor (HBT). Feature list • • • High transition frequency fT = 45 GHz to enable low noise figure at high frequencies: NFmin= 0.7 dB at 5.5 GHz, 3 V, 5 mA High gain Gma = 19.5 dB at 5.5 GHz, 3 V, 13 mA OIP3 = 23 dBm at 5.5 GHz, 3 V, 13 mA Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications • • • • Wireless communications: WLAN, WiMax and UWB Satellite communication systems: GNSS navigation systems (GPS, GLONASS, BeiDou, Galileo), satellite radio (SDARs, DAB) and C-band LNB Multimedia applications such as portable TV, CATV and FM radio ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications Device information Table 1 Part information Product name / Ordering code Package Pin configuration BFP720 / BFP720H6327XTSA1 SOT343 1=B 2=E 3=C 4=E Marking Pieces / Reel R9s 3000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document v2.0 2018-09-26 BFP720 SiGe:C NPN RF bipolar transistor Table of contents Table of contents Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 3.1 3.2 3.3 3.4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 Characteristic diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4 Package information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Datasheet 2 v2.0 2018-09-26 BFP720 SiGe:C NPN RF bipolar transistor Absolute maximum ratings 1 Absolute maximum ratings Table 2 Absolute maximum ratings at TA = 25 °C (unless otherwise specified) Parameter Symbol Values Min. Collector emitter voltage VCEO – Unit Note or test condition V Open base Max. 4.0 3.5 TA = -55 °C, open base Collector emitter voltage VCES 13 E-B short circuited Collector base voltage VCBO 13 Open emitter Emitter base voltage VEBO 1.2 Open collector Base current IB 2 Collector current IC 25 Total power dissipation1) Ptot Junction temperature TJ Storage temperature TStg mA – 100 mW TS ≤ 108 °C 150 °C – -55 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the integrated circuit. 1 TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB. Datasheet 3 v2.0 2018-09-26 BFP720 SiGe:C NPN RF bipolar transistor Thermal characteristics 2 Thermal characteristics Table 3 Thermal resistance Parameter Symbol Junction - soldering point RthJS Values Min. Typ. Max. – 420 – Unit Note or test condition K/W – 120 100 Ptot[mW] 80 60 40 20 0 0 50 100 150 Ts [°C] Figure 1 Datasheet Total power dissipation Ptot = f(TS) 4 v2.0 2018-09-26 BFP720 SiGe:C NPN RF bipolar transistor Thermal characteristics 10 D= 0 D= .005 D= .01 Ptot_max / Ptot_DC D= .02 D= .05 D= .1 D= .2 D=0 D= .5 1.E+00 1.E-01 1.E-02 1.E-03 1.E-04 1.E-07 1.E-06 1 1.E-05 D=0.5 tp [sec] Figure 2 Permissible pulse load Ptot, max / P tot, DC = f(tp) 1000 RthJS[K/W] D=0.5 1.E+00 1.E-01 1.E-03 1.E-04 1.E-05 1.E-07 100 1.E-06 D=0 1.E-02 D= .5 D= .2 D= .1 D= .05 D= .02 D= .01 D= .005 D= 0 tp [sec] Figure 3 Permissible pulse load RthJS = f(tp) Datasheet 5 v2.0 2018-09-26 BFP720 SiGe:C NPN RF bipolar transistor Electrical characteristics 3 Electrical characteristics 3.1 DC characteristics Table 4 DC characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Max. Unit Note or test condition Collector emitter breakdown voltage V(BR)CEO 4 4.7 – V IC = 1 mA, IB = 0, open base Collector emitter leakage current ICES – – 30 1) μA VCE = 13 V, VBE = 0, E-B short circuited Collector base leakage current ICBO 100 1) nA VCB = 5 V, IE = 0, open emitter Emitter base leakage current IEBO 2 1) VEB = 0.5 V, IC = 0, open collector DC current gain hFE 160 3.2 General AC characteristics Table 5 General AC characteristics at TA = 25 °C Parameter Symbol 250 μA 400 Values Min. Typ. Max. – 45 – VCE = 3 V, IC = 13 mA, pulse measured Unit Note or test condition GHz VCE = 3 V, IC = 13 mA, f = 1 GHz pF VCB = 3 V, VBE = 0, f = 1 MHz, emitter grounded Transition frequency fT Collector base capacitance CCB 0.06 Collector emitter capacitance CCE 0.35 VCE = 3 V, VBE = 0, f = 1 MHz, base grounded Emitter base capacitance CEB 0.35 VEB = 0.5 V, VCB = 0, f = 1 MHz, collector grounded 1 Maximum values not limited by the device but by the short cycle time of the 100% test. Datasheet 6 v2.0 2018-09-26 BFP720 SiGe:C NPN RF bipolar transistor Electrical characteristics 3.3 Frequency dependent AC characteristics Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C. VC Top View Bias-T OUT E C B E VB Bias-T (Pin 1) IN Figure 4 Testing circuit Table 6 AC characteristics, VCE = 3 V, f = 150 MHz Parameter Symbol Values Min. Typ. Max. Unit Note or test condition Power gain • Maximum power gain • Transducer gain Gms |S21|2 – 37.5 29.5 – dB IC = 13 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass – 0.4 28.5 – dB IC = 5 mA Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB – 22 6 – dBm ZS = ZL = 50 Ω IC = 13 mA Datasheet 7 v2.0 2018-09-26 BFP720 SiGe:C NPN RF bipolar transistor Electrical characteristics Table 7 AC characteristics, VCE = 3 V, f = 450 MHz Parameter Symbol Values Min. Typ. Max. Unit Note or test condition Power gain • Maximum power gain • Transducer gain Gms |S21|2 – 32.5 28.5 – dB IC = 13 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass – 0.4 28 – dB IC = 5 mA – 21.5 5.5 – dBm ZS = ZL = 50 Ω IC = 13 mA Unit Note or test condition Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Table 8 AC characteristics, VCE = 3 V, f = 900 MHz Parameter Symbol Values Min. Typ. Max. Power gain • Maximum power gain • Transducer gain Gms |S21|2 – 29.5 27.5 – dB IC = 13 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass – 0.4 26 – dB IC = 5 mA – 21 5.5 – dBm ZS = ZL = 50 Ω IC = 13 mA Unit Note or test condition Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Table 9 AC characteristics, VCE = 3 V, f = 1.5 GHz Parameter Symbol Values Min. Typ. Max. Power gain • Maximum power gain • Transducer gain Gms |S21|2 – 27.5 25.5 – dB IC = 13 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass – 0.45 24 – dB IC = 5 mA Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB – 21.5 6 – dBm ZS = ZL = 50 Ω IC = 13 mA Datasheet 8 v2.0 2018-09-26 BFP720 SiGe:C NPN RF bipolar transistor Electrical characteristics Table 10 AC characteristics, VCE = 3 V, f = 1.9 GHz Parameter Symbol Values Min. Typ. Max. Unit Note or test condition Power gain • Maximum power gain • Transducer gain Gms |S21|2 – 26 24.5 – dB IC = 13 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass – 0.45 23 – dB IC = 5 mA – 22 7 – dBm ZS = ZL = 50 Ω IC = 13 mA Unit Note or test condition Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Table 11 AC characteristics, VCE = 3 V, f = 2.4 GHz Parameter Symbol Values Min. Typ. Max. Power gain • Maximum power gain • Transducer gain Gms |S21|2 – 25 23 – dB IC = 13 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass – 0.5 21.5 – dB IC = 5 mA – 22 6 – dBm ZS = ZL = 50 Ω IC = 13 mA Unit Note or test condition Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Table 12 AC characteristics, VCE = 3 V, f = 3.5 GHz Parameter Symbol Values Min. Typ. Max. Power gain • Maximum power gain • Transducer gain Gms |S21|2 – 23.5 20 – dB IC = 13 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass – 0.55 19 – dB IC = 5 mA Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB – 22.5 7.5 – dBm ZS = ZL = 50 Ω IC = 13 mA Datasheet 9 v2.0 2018-09-26 BFP720 SiGe:C NPN RF bipolar transistor Electrical characteristics Table 13 AC characteristics, VCE = 3 V, f = 5.5 GHz Parameter Symbol Values Min. Typ. Max. Unit Note or test condition Power gain • Maximum power gain • Transducer gain Gma |S21|2 – 19.5 16 – dB IC = 13 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass – 0.7 15 – dB IC = 5 mA – 23 8.5 – dBm ZS = ZL = 50 Ω IC = 13 mA Unit Note or test condition Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Table 14 AC characteristics, VCE = 3 V, f = 10 GHz Parameter Symbol Values Min. Typ. Max. Power gain • Maximum power gain • Transducer gain Gma |S21|2 – 15 10 – dB IC = 13 mA Noise figure • Minimum noise figure • Associated gain NFmin Gass – 0.95 10.5 – dB IC = 5 mA – 19.5 8 – dBm ZS = ZL = 50 Ω IC = 13 mA Linearity • 3rd order intercept point at output OIP3 • 1 dB gain compression point at output OP1dB Note: Datasheet Gms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all measured results. 10 v2.0 2018-09-26 BFP720 SiGe:C NPN RF bipolar transistor Electrical characteristics 3.4 Characteristic diagrams 50 45 3V 40 2V 35 fT [GHz] 30 25 20 15 10 1V 5 0.5 V 0 1 10 100 Ic [mA] Figure 5 Transition frequency fT = f(IC, VCE), f = 1 GHz, VCE = parameter 42 39 36 33 30 Gms G [dB] 27 24 21 18 Gma |S21|2 15 12 9 6 0 1 2 3 4 5 6 7 8 9 10 f [GHz] Figure 6 Datasheet Power gain Gma, Gms, IS21I2 = f(f), VCE = 3 V, IC = 13 mA 11 v2.0 2018-09-26 BFP720 SiGe:C NPN RF bipolar transistor Electrical characteristics 42 40 0.15GHz 38 36 0.45GHz 34 32 0.90GHz 30 1.50GHz 1.90GHz 2.40GHz G [dB] 28 26 3.50GHz 24 22 20 5.50GHz 18 16 10.00GHz 14 12 10 0 5 10 15 20 25 30 IC [mA] Figure 7 Power gain Gma, Gms = f(IC), VCE = 3 V, f = Parameter in GHz 40 38 0.15GHz 36 34 0.45GHz 32 30 0.90GHz 28 1.50GHz 1.90GHz 2.40GHz G [dB] 26 24 3.50GHz 22 20 5.50GHz 18 16 10.00GHz 14 12 10 8 6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VCE [V] Figure 8 Datasheet Power gain Gma, Gms = f(VCE), IC = 13 mA, f = Parameter in GHz 12 v2.0 2018-09-26 BFP720 SiGe:C NPN RF bipolar transistor 0 4. 5.0 S11 @3V, 13mA 5 GHz 10.0 4.0 5.0 3.0 1.0 2.0 10.0 0.6 4 GHz 0.4 0.2 0 3. S11 @3V, 5mA 6 GHz 0.8 0. 4 6 GHz 9 GHz 8 GHz 7 GHz 8 GHz 7 GHz 10 GHz 2. 0 0.8 6 0. 10 GHz 9 GHz 0.2 5 GHz 0 1.0 Electrical characteristics 3 GHz -10.0 4 GHz -4 . -5. 0 0 2 -0. 2 GHz 1 GHz 3 GHz .0 -2 2 GHz -1.0 -0.8 -0 .6 1 GHz 2. 0 6 0. 0.8 1.0 Input reflection coefficient S11 = f(f), VCE = 3 V, IC = 5 / 13 mA 0. 4 0 3. 0 4. 5.0 S22 @3V, 5mA 10 GHz 1 GHz 3 GHz 1 GHz -1.0 -0.8 .0 -2 2 GHz -0 .6 10.0 4.0 5.0 3.0 2.0 0.8 0.6 0.4 0.2 0 1.0 2 GHz 4 GHz .4 -0 Datasheet 4 GHz 3 GHz -3 .0 5 GHz 8 GHz 7 GHz 6 GHz 5 GHz -10.0 0.2 8 GHz 7 GHz 6 GHz Figure 10 10.0 9 GHz 9 GHz 2 -0. S22 @3V, 13mA -4 . -5. 0 0 Figure 9 -3 .0 .4 -0 Output reflection coefficient S22 = f(f), VCE = 3 V, IC = 5 / 13 mA 13 v2.0 2018-09-26 BFP720 SiGe:C NPN RF bipolar transistor Electrical characteristics Figure 11 Source impedance for minimum noise figure ZS,opt = f(f), VCE = 3 V, IC = 5 / 13 mA 2 1.9 f = 10GHz 1.8 f = 5.5GHz 1.7 f = 2.4GHz 1.6 1.5 f = 1.9GHz 1.4 f = 0.45GHz 1.3 1.2 F [dB] 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 2 4 6 8 10 12 14 16 18 20 Ic [mA] Figure 12 Datasheet Noise figure NFmin = f(IC), VCE = 3 V, ZS = ZS,opt, f = parameter in GHz 14 v2.0 2018-09-26 BFP720 SiGe:C NPN RF bipolar transistor Electrical characteristics 1.4 1.3 1.2 1.1 1 0.9 F [dB] 0.8 0.7 0.6 0.5 IC = 13mA 0.4 I = 5.0mA C 0.3 0.2 0.1 0 0 1 2 3 4 5 6 7 8 9 10 f [GHz] Figure 13 Note: Datasheet Noise figure NFmin = f(f), VCE = 3 V, ZS = ZS,opt, IC = 5 / 13 mA The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C. 15 v2.0 2018-09-26 BFP720 SiGe:C NPN RF bipolar transistor Package information SOT343 0.9 ±0.1 Package information SOT343 1.25 ±0.1 0.15 -0.05 +0.10 A 0.1 0.1 MIN. 0.1 2.1 ±0.1 A 2 1 3x +0.10 0.3 -0.05 0.6 -0.05 +0.10 1.3 2 ±0.2 0.1 3 4 0.15 0.2 0.1 MAX. 4 MOLD FLAS H, P ROTRUS ION OR GATE BURRS OF 0.2 MM MAXIMUM P ER S IDE ARE NOT INCLUDED ALL DIMENS IONS ARE IN UNITS MM THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [ ] Figure 14 Package outline Figure 15 Foot print TYP E CODE NOTE OF MANUFACTURER MONTH YEAR Figure 16 Marking layout example 4 0.2 2.3 8 2 P IN 1 INDEX MARKING 2.15 ALL DIMENS IONS ARE IN UNITS MM THE DRAWING IS IN COMP LIANCE WITH IS O 128 & P ROJ ECTION METHOD 1 [ Figure 17 Datasheet 1.1 ] Tape dimensions 16 v2.0 2018-09-26 BFP720 SiGe:C NPN RF bipolar transistor Revision history Revision history Document version Date of release Description of changes 2.0 2018-09-26 New datasheet layout. Datasheet 17 v2.0 2018-09-26 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2018-09-26 Published by Infineon Technologies AG 81726 Munich, Germany © 2018 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-mis1519374277292 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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